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Home > Products > Transistors > FETs, MOSFETs > ///IPT017N10NF2SATMA1

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IPT017N10NF2SATMA1Quantity:3754

Part No IPT017N10NF2SATMA1
Manufacturer Infineon Technologies
Description MOSFET
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id195 nC @ 10 V
Vgs(th)(Max)@Id9300 pF @ 50 V
Vgs±20V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperaturePG-HSOF-8
DriveVoltage(MaxRdsOn1.75mOhm @ 150A, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-PowerSFN
InputCapacitance(Ciss)(Max)@Vds3.8W (Ta), 300W (Tc)
SeriesStrongIRFET™ 2
Qualification
SupplierDevicePackage6V, 10V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C33A (Ta), 294A (Tc)
Vgs(Max)-
MinRdsOn)3.8V @ 216µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)Surface Mount

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