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Home > Products > Transistors > FETs, MOSFETs > ///IPP35CN10N G

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IPP35CN10N GQuantity:11157

Part No IPP35CN10N G
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 27A TO220-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4V @ 29µA
Vgs(th)(Max)@Id±20V
Vgs24 nC @ 10 V
FETFeature58W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO220-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C27A (Tc)
Vgs(Max)1570 pF @ 50 V
MinRdsOn)35mOhm @ 27A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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