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Home > Products > Transistors > FETs, MOSFETs > ///IPP339N20NM6AKSA1

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Part No IPP339N20NM6AKSA1
Manufacturer Infineon Technologies
Description MOSFET
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
PackageTube
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Grade-
Mounting TypeThrough Hole
Product StatusActive
Rds On (Max) @ Id, Vgs31.8mOhm @ 26A, 15V
Vgs(th) (Max) @ Id4.5V @ 52µA
Supplier Device PackagePG-TO220-3-1
Drain to Source Voltage (Vdss)200 V
SeriesOptiMOS™ 6
Power Dissipation (Max)3.8W (Ta), 125W (Tc)
Qualification-
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C6.8A (Ta), 39A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)10V, 15V

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