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Home > Products > Transistors > FETs, MOSFETs > ///IMZ120R350M1HXKSA1

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IMZ120R350M1HXKSA1Quantity:5103

Part No IMZ120R350M1HXKSA1
Manufacturer Infineon Technologies
Description SICFET N-CH 1.2KV 4.7A TO247-4
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id5.3 nC @ 18 V
Vgs(th)(Max)@Id182 pF @ 800 V
Vgs+23V, -7V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperaturePG-TO247-4-1
DriveVoltage(MaxRdsOn350mOhm @ 2A, 18V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-247-4
InputCapacitance(Ciss)(Max)@Vds60W (Tc)
SeriesCoolSiC™
Qualification
SupplierDevicePackage15V, 18V
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C4.7A (Tc)
Vgs(Max)-
MinRdsOn)5.7V @ 1mA
PackageTube
PowerDissipation(Max)Through Hole

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