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Home > Products > Transistors > FETs, MOSFETs > ///IMZ120R090M1HXKSA1

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Part No IMZ120R090M1HXKSA1
Manufacturer Infineon Technologies
Description SICFET N-CH 1.2KV 26A TO247-4
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id5.7V @ 3.7mA
Vgs(th)(Max)@Id+23V, -7V
Vgs21 nC @ 18 V
FETFeature115W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn15V, 18V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO247-4-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolSiC™
Qualification
SupplierDevicePackageTO-247-4
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C26A (Tc)
Vgs(Max)707 pF @ 800 V
MinRdsOn)117mOhm @ 8.5A, 18V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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