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Home > Products > Transistors > IGBTs > ///GT30J65MRB,S1E

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GT30J65MRB,S1EQuantity:23439

Part No GT30J65MRB,S1E
Manufacturer Toshiba Semiconductor and Storage
Description 650V SILICON N-CHANNEL IGBT, TO-
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)650 V
SwitchingEnergyStandard
OperatingTemperatureThrough Hole
ProductStatusActive
Package/Case200 ns
GradeTO-3P-3, SC-65-3
MountingType-
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C400V, 15A, 56Ohm, 15V
QualificationTO-3P(N)
SupplierDevicePackage-
InputType70 nC
Vce(on)(Max)@Vge1.8V @ 15V, 30A
GateCharge75ns/400ns
Current-Collector(Ic)(Max)60 A
Ic200 W
TestCondition175°C (TJ)
PackageTube
Power-Max1.4mJ (on), 220µJ (off)
IGBTType-

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