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GT30J341,QQuantity:3231

Part No GT30J341,Q
Manufacturer Toshiba Semiconductor and Storage
Description IGBT TRANS 600V 30A TO3PN
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)600 V
SwitchingEnergyStandard
OperatingTemperatureThrough Hole
ProductStatusActive
Package/Case50 ns
GradeTO-3P-3, SC-65-3
MountingType120 A
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C300V, 30A, 24Ohm, 15V
QualificationTO-3P(N)
SupplierDevicePackage-
InputType-
Vce(on)(Max)@Vge2V @ 15V, 30A
GateCharge80ns/280ns
Current-Collector(Ic)(Max)59 A
Ic230 W
TestCondition175°C (TJ)
PackageTray
Power-Max800µJ (on), 600µJ (off)
IGBTType-

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