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Home > Products > Transistors > FETs, MOSFETs > ///GT110N06S

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GT110N06SQuantity:21382

Part No GT110N06S
Manufacturer Goford Semiconductor
Description N60V,RD(MAX)<[email protected],RD(MAX)<1
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.4V @ 250µA
Vgs(th)(Max)@Id1300 pF @ 25 V
Vgs±20V
FETFeature-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperature8-SOP
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-SOIC (0.154, 3.90mm Width)
InputCapacitance(Ciss)(Max)@Vds3W (Tc)
SeriesSGT
Qualification
SupplierDevicePackage24 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C14A (Tc)
Vgs(Max)Standard
MinRdsOn)11mOhm @ 14A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)Surface Mount

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