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Home > Products > Transistors > FETs, MOSFETs > ///GT110N06D3

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GT110N06D3Quantity:3765

Part No GT110N06D3
Manufacturer Goford Semiconductor
Description N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs24 nC @ 10 V
FETFeature25W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-DFN (3.15x3.05)
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesSGT
Qualification
SupplierDevicePackage8-PowerVDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C35A (Tc)
Vgs(Max)1059 pF @ 30 V
MinRdsOn)11mOhm @ 14A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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