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Home > Products > Transistors > FETs, MOSFETs > ///GT080N10T

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GT080N10TQuantity:4927

Part No GT080N10T
Manufacturer Goford Semiconductor
Description N100V, 70A,RD<8M@10V,VTH1.0V~3.0
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id3V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs35 nC @ 10 V
FETFeature100W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesSGT
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C70A (Tc)
Vgs(Max)2257 pF @ 50 V
MinRdsOn)8mOhm @ 50A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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