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Home > Products > Transistors > FETs, MOSFETs > ///GT080N10M

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GT080N10MQuantity:14800

Part No GT080N10M
Manufacturer Goford Semiconductor
Description N100V, 70A,RD<7.5M@10V,VTH1V~3V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id7.5mOhm @ 20A, 10V
Vgs(th)(Max)@Id35 nC @ 10 V
Vgs3V @ 250µA
FETFeatureStandard
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
OperatingTemperature-55°C ~ 150°C (TJ)
DriveVoltage(MaxRdsOn70A (Tc)
ProductStatusSGT
Package/CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GateCharge(Qg)(Max)@Vgs-
Grade-
MountingTypeSurface Mount
InputCapacitance(Ciss)(Max)@Vds2125 pF @ 50 V
SeriesTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Qualification
SupplierDevicePackageTO-263
FETTypeActive
TechnologyN-Channel
Current-ContinuousDrain(Id)@25°C100 V
Vgs(Max)±20V
MinRdsOn)4.5V, 10V
Package1
PowerDissipation(Max)100W (Tc)

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