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Home > Products > Transistors > FETs, MOSFETs > ///GT045N10M

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GT045N10MQuantity:4456

Part No GT045N10M
Manufacturer Goford Semiconductor
Description N100V, 120A,RD<4.5M@10V,VTH2V~4V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs60 nC @ 10 V
FETFeature180W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-263
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesSGT
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C120A (Tc)
Vgs(Max)4198 pF @ 50 V
MinRdsOn)4.5mOhm @ 30A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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