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Home > Products > Transistors > FETs, MOSFETs > ///GT042P06T

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GT042P06TQuantity:24364

Part No GT042P06T
Manufacturer Goford Semiconductor
Description MOSFET, P-CH,-60V,-160A,RD(MAX)<
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs305 nC @ 10 V
FETFeature280W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CaseTO-220
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
MountingType-
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesSGT
Qualification
SupplierDevicePackageThrough Hole
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C160A (Tc)
Vgs(Max)9151 pF @ 30 V
MinRdsOn)4.5mOhm @ 15A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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