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G3S06510DQuantity:3992

Part No G3S06510D
Manufacturer Global Power Technology-GPT
Description DIODE SIL CARBIDE 650V 34A TO263
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Current-ReverseLeakage@Vr690pF @ 0V, 1MHz
SpeedNo Recovery Time > 500mA (Io)
F-
ProductStatusActive
Package/CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade0 ns
Capacitance@Vr-
ReverseRecoveryTime(trr)50 µA @ 650 V
MountingTypeSurface Mount
Series-
Qualification
SupplierDevicePackageTO-263
Voltage-Forward(Vf)(Max)@If1.7 V @ 10 A
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
OperatingTemperature-Junction-55°C ~ 175°C
Current-AverageRectified(Io)34A
PackageCut Tape (CT),Tape & Box (TB)

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