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G3S06503DQuantity:4758

Part No G3S06503D
Manufacturer Global Power Technology-GPT
Description DIODE SIL CARB 650V 11.5A TO263
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Current-ReverseLeakage@Vr50 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)
FSurface Mount
ProductStatusActive
Package/CaseTO-263
Grade-
Capacitance@Vr181pF @ 0V, 1MHz
ReverseRecoveryTime(trr)0 ns
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Series-
Qualification
SupplierDevicePackage-55°C ~ 175°C
Voltage-Forward(Vf)(Max)@If1.7 V @ 3 A
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
OperatingTemperature-Junction-
Current-AverageRectified(Io)11.5A
PackageCut Tape (CT),Tape & Box (TB)

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