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Home > Products > Transistors > FETs, MOSFETs > ///FQI4N80TU

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FQI4N80TUQuantity:10572

Part No FQI4N80TU
Manufacturer Fairchild Semiconductor
Description MOSFET N-CH 800V 3.9A I2PAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id5V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs25 nC @ 10 V
FETFeature3.13W (Ta), 130W (Tc)
DraintoSourceVoltage(Vdss)800 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds-
SeriesQFET®
Qualification
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3.9A (Tc)
Vgs(Max)880 pF @ 25 V
MinRdsOn)3.6Ohm @ 1.95A, 10V
PackageBulk
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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