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FQI4N25TUQuantity:7825

Part No FQI4N25TU
Manufacturer ON Semiconductor
Description MOSFET N-CH 250V 3.6A I2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):250V
Power Dissipation (Max):3.13W (Ta), 52W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:I2PAK (TO-262)
Vgs(th) (Max) @ Id:5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 250V 3.6A (Tc) 3.13W (Ta), 52W (Tc) Through Hole I2PAK (TO-262)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:N-Channel
Series:QFET®
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:200pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:1.75 Ohm @ 1.8A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:5.6nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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