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Home > Products > Transistors > FETs, MOSFETs > ///BSG0813NDIATMA1

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BSG0813NDIATMA1Quantity:6747

Part No BSG0813NDIATMA1
Manufacturer Infineon Technologies
Description MOSFET 2N-CH 25V 19A/33A TISON8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3mOhm @ 20A, 10V
Vgs(th)(Max)@Id8.4nC @ 4.5V
Vgs2V @ 250µA
Configuration2 N-Channel (Dual) Asymmetrical
FETFeatureLogic Level Gate, 4.5V Drive
DraintoSourceVoltage(Vdss)25V
OperatingTemperature-
ProductStatusActive
Package/CaseSurface Mount
GateCharge(Qg)(Max)@Vgs1100pF @ 12V
GradePG-TISON-8
MountingType-
InputCapacitance(Ciss)(Max)@Vds2.5W
Series-
Qualification
SupplierDevicePackage8-PowerTDFN
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C19A, 33A
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max-55°C ~ 155°C (TJ)

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