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Home > Products > Transistors > FETs, MOSFETs > ///BSG0810NDIATMA1

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Part No BSG0810NDIATMA1
Manufacturer Infineon Technologies
Description MOSFET 2N-CH 25V 19A/39A TISON8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3mOhm @ 20A, 10V
Vgs(th)(Max)@Id8.4nC @ 4.5V
Vgs2V @ 250µA
Configuration2 N-Channel (Dual) Asymmetrical
FETFeatureLogic Level Gate, 4.5V Drive
DraintoSourceVoltage(Vdss)25V
OperatingTemperatureSurface Mount
ProductStatusActive
Package/CasePG-TISON-8
GateCharge(Qg)(Max)@Vgs1040pF @ 12V
Grade-
MountingType8-PowerTDFN
InputCapacitance(Ciss)(Max)@Vds2.5W
SeriesOptiMOS™
Qualification
SupplierDevicePackage-
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C19A, 39A
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max-55°C ~ 155°C (TJ)

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