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BSC889N03LSGQuantity:18053

Part No BSC889N03LSG
Manufacturer
Description Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage30 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Fall Time2.4 ns
Turn-On Delay Time2.8 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)60 V
Power Dissipation2.5 W
Drain to Source Resistance9 mΩ
Continuous Drain Current (ID)13 A
Rise Time2.2 ns
Turn-Off Delay Time13 ns
Number of Pins8
Input Capacitance41 pF
Rds On Max3.5 Ω
Case/PackageTO-236-3
Max Power Dissipation360 mW

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