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BSC883N03MSGQuantity:19786

Part No BSC883N03MSG
Manufacturer
Description Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage30 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Fall Time8 ns
Turn-On Delay Time15 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)600 V
Power Dissipation2.5 W
Drain to Source Resistance3.8 mΩ
Continuous Drain Current (ID)19 A
Rise Time7.6 ns
Turn-Off Delay Time19 ns
Number of Pins8
Input Capacitance28 pF
Rds On Max500 Ω
Case/PackageTO-236-3
Max Power Dissipation500 mW

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