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Home > Products > Transistors > FETs, MOSFETs > ///BSC120N12LSGATMA1

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BSC120N12LSGATMA1Quantity:4637

Part No BSC120N12LSGATMA1
Manufacturer Infineon Technologies
Description TRENCH >=100V PG-TDSON-8
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id2.4V @ 72µA
Vgs(th)(Max)@Id±20V
Vgs51 nC @ 10 V
FETFeature114W (Tc)
DraintoSourceVoltage(Vdss)120 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TDSON-8
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackage8-PowerTDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C10A (Ta), 68A (Tc)
Vgs(Max)4900 pF @ 60 V
MinRdsOn)12mOhm @ 34A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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