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Home > Products > Transistors > FETs, MOSFETs > ///BSC109N10NS3GATMA1

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BSC109N10NS3GATMA1Quantity:15831

Part No BSC109N10NS3GATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 63A TDSON-8-1
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id3.5V @ 45µA
Vgs(th)(Max)@Id±20V
Vgs35 nC @ 10 V
FETFeature78W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TDSON-8-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackage8-PowerTDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C63A (Tc)
Vgs(Max)2500 pF @ 50 V
MinRdsOn)10.9mOhm @ 46A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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