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| Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
|---|---|---|---|---|---|---|
 |
W632GU8QB09I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> |
|
GD25R512MFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
 |
W632GU6QB15I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> |
|
W634GU6RB-09 | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 1066 | Contains Lead | compliant | RFQ >> |
|
W634GU8RB09I TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> |
|
W634GU6RB09I TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 1066 | Contains Lead | compliant | RFQ >> |
 |
MX25L51273GMI-10G | Macronix | Linear IC | Contains Lead | compliant | RFQ >> |
|
CY62148G30-45ZAXIT | Infineon Technologies | ASYNC | Contains Lead | compliant | RFQ >> |
|
IS42S32400J-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
W25Q512NWEIN TR | Winbond Electronics | SPIFLASH, 512M-BIT, 1.8V, 4KB UN | Contains Lead | compliant | RFQ >> |
|
GD25LX256EF2RR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7BLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> |
|
W29N02KZSIBE | Winbond Electronics | 2G-BIT SLC NAND FLASH, 1.8V, 8-B | Contains Lead | compliant | RFQ >> |
|
E308GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
EM04GSEQG-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
W632GU6QB12I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> |
 |
W25N02KVZEIE | Winbond Electronics | 2G-BIT SERIAL NAND FLASH, 3V | Contains Lead | compliant | RFQ >> |
|
GD25R512MFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W25Q512NWFIN TR | Winbond Electronics | SPIFLASH, 512M-BIT, 1.8V, 4KB UN | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAWP-AIT1:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
W634GU8RB-11 | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> |
|
GD25LT256EY2GR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
W632GU6QB09I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> |
|
W632GU6QB11I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> |
|
W634GU8RB-09 | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> |
|
GD25LX256EBARY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD25LB512MFYJGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
 |
W959D6NFKX5I | Winbond Electronics | 512MB HYPERRAM X16, 200MHZ, IND | Contains Lead | compliant | RFQ >> |
 |
AS4C1G8D4A-62BCNTR | Alliance Memory, Inc. | DDR4, 8GB, 1G X 8, 1.2V, 78-BALL | Contains Lead | compliant | RFQ >> |
|
GD5F4GM8UEBIGY | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-6BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
W959D6NFKX5I TR | Winbond Electronics | 512MB HYPERRAM X16, 200MHZ, IND | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
E208GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
E304GSEQG-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
W959D6NFKX4I TR | Winbond Electronics | 512MB HYPERRAM X16, 250MHZ, IND | Contains Lead | compliant | RFQ >> |
|
W25R512JVFIN | Winbond Electronics | RPMC SPIFLASH, 3V, 512M-BIT, DRV | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAWP-AAT1:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAWP-AAT1:C TR | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
 |
AS4C512M16D4A-62BCNTR | Alliance Memory, Inc. | DDR4, 8GB, 512M X 16, 1.2V, 96-B | Contains Lead | compliant | RFQ >> |
 |
W35N02JWTBIC TR | Winbond Electronics | 2G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
W35N02JWTBIF TR | Winbond Electronics | 2G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
CY62148G30-45ZAXI | Infineon Technologies | ASYNC | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
GD9FU4G8F4DMGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
GD9FU4G8F4DLGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAFJ | Winbond Electronics | 1GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
GD5F2GQ5UEY2GR | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
