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| Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
|---|---|---|---|---|---|---|
 |
W35N01JWTBIG | Winbond Electronics | 1G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
W35N01JWTBIT | Winbond Electronics | 1G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
 |
IS42S32400J-7TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Contains Lead | compliant | RFQ >> |
|
IS42S16160L-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> |
 |
W66AP6NBHAFJ | Winbond Electronics | 1GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
GD25B512MFBIRY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
IS42S16160L-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> |
|
W25R512JVFIN TR | Winbond Electronics | RPMC SPIFLASH, 3V, 512M-BIT, DRV | Contains Lead | compliant | RFQ >> |
|
GD25F512MFBIRY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7TLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7TLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> |
|
W25Q512JVEIN TR | Winbond Electronics | SPIFLASH, 512M-BIT, 4KB UNIFORM | Contains Lead | compliant | RFQ >> |
|
W632GU8QB-15 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 667MH | Contains Lead | compliant | RFQ >> |
|
IS42S32400J-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
GD25B512MFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W63AH2NBVABE | Winbond Electronics | 1GB LPDDR3, X32, 800MHZ | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7BLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> |
|
W63AH2NBVADE | Winbond Electronics | 1GB LPDDR3, X32, 1066MHZ | Contains Lead | compliant | RFQ >> |
|
W63AH6NBVADE | Winbond Electronics | 1GB LPDDR3, X16, 1066MHZ | Contains Lead | compliant | RFQ >> |
|
GD25LT256EBARY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU8QB-12 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 800MH | Contains Lead | compliant | RFQ >> |
|
GD25F512MFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W25Q512JVFIN TR | Winbond Electronics | SPIFLASH, 512M-BIT, 4KB UNIFORM | Contains Lead | compliant | RFQ >> |
|
IS42S32400J-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Contains Lead | compliant | RFQ >> |
|
GD25B512MFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU8QB-11 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> |
|
IS42S32400J-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> |
|
EM08GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
GD25F512MFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-6TLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> |
|
W632GU8QB-09 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> |
|
GD25LT256EFARR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
 |
W632GU6QB-15 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, 667M | Contains Lead | compliant | RFQ >> |
|
GD5F2GM7REY2GR | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU6QB-12 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, 800M | Contains Lead | compliant | RFQ >> |
|
GD25LB512MFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU8QB15I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 667MH | Contains Lead | compliant | RFQ >> |
|
GD25LF512MFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD25LT256EW2GR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU8QB12I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 800MH | Contains Lead | compliant | RFQ >> |
|
IS45S16160L-7TLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> |
|
GD25LF512MFBIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W632GU6QB-09 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, 1066 | Contains Lead | compliant | RFQ >> |
|
W632GU6QB-11 | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, 933M | Contains Lead | compliant | RFQ >> |
 |
W29N02KZBIBE | Winbond Electronics | 2G-BIT SERIAL NAND FLASH, 1.8V, | Contains Lead | compliant | RFQ >> |
|
IS42S32800L-6BL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> |
|
W632GU8QB11I | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> |
|
W634GU8RB11I TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> |
|
W634GU6RB11I TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 933M | Contains Lead | compliant | RFQ >> |
