Copyright © 2021 Reliable Distributor of Electronic Components - acme-chip.com
E-mail: [email protected]
Address: Room 666, building 404, Shangbu Industrial Zone, Hongli Road, Futian District, Shenzhen
Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
---|---|---|---|---|---|---|
GD25F256FBARY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6TL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
W29N02KZSIBE TR | Winbond Electronics | 2G-BIT SLC NAND FLASH, 1.8V, 8-B | Contains Lead | compliant | RFQ >> | |
IS42S83200L-7TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
W632GU6QB15I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> | |
W632GU8QB15I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 667MH | Contains Lead | compliant | RFQ >> | |
W634GU6RB-09 TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 1066 | Contains Lead | compliant | RFQ >> | |
IS42S16160L-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
GD5F2GM7REYJGR | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6BL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
W25Q256JWEIN | Winbond Electronics | SPIFLASH, 1.8V, 256M-BIT, 4KB UN | Contains Lead | compliant | RFQ >> | |
BY25QM512FSEIG(R) | BYTe Semiconductor | 512 MBIT, 3.0V (2.7V TO 3.6V), - | Contains Lead | compliant | RFQ >> | |
W632GU6QB12I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> | |
W632GU8QB12I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 800MH | Contains Lead | compliant | RFQ >> | |
IS42S16160L-7TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
IS42S83200L-6TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
BY25QM512FSFIG(T) | BYTe Semiconductor | 512 MBIT, 3.0V (2.7V TO 3.6V), - | Contains Lead | compliant | RFQ >> | |
IS42S32200N-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
W632GU8QB11I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> | |
IS42S32400J-7TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Contains Lead | compliant | RFQ >> | |
GD25F256FFARR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
W632GU6QB09I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> | |
W632GU8QB09I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> | |
W632GU6QB11I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | Contains Lead | compliant | RFQ >> | |
IS42S16160L-7TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
IS42S83200L-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
GD25LX256EBJRY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> | |
W97AH6NBVA2I | Winbond Electronics | 1GB LPDDR2, X16, 400MHZ, -40 ~ 8 | Contains Lead | compliant | RFQ >> | |
IS42S16160L-7BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
IS42S83200L-7TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
W958D6NBKX5I TR | Winbond Electronics | 256MB HYPERRAM X16, 200MHZ, IND | Contains Lead | compliant | RFQ >> | |
W958D6NBKX4I | Winbond Electronics | 256MB HYPERRAM X16, 250MHZ, IND | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
W634GU6RB-11 TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 933M | Contains Lead | compliant | RFQ >> | |
W634GU8RB-11 TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> | |
IS45S16160L-7TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
W634GU8RB-09 TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> | |
IS42S32400J-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Contains Lead | compliant | RFQ >> | |
IS45S16160L-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
W958D6NBKX4I TR | Winbond Electronics | 256MB HYPERRAM X16, 250MHZ, IND | Contains Lead | compliant | RFQ >> | |
W25R256JVFIN | Winbond Electronics | RPMC SPIFLASH, 3V, 256M-BIT, DRV | Contains Lead | compliant | RFQ >> | |
IS42S32400J-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Contains Lead | compliant | RFQ >> | |
IS42S83200L-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
IS42S16160L-7TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Contains Lead | compliant | RFQ >> | |
GD25LT256EF2RR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> | |
IS42S16160L-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Contains Lead | compliant | RFQ >> | |
BY25QM512FSZIG(Y) | BYTe Semiconductor | 512 MBIT, 3.0V (2.7V TO 3.6V), - | Contains Lead | compliant | RFQ >> |