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| Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
|---|---|---|---|---|---|---|
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W25Q512JVFIN | Winbond Electronics | SPIFLASH, 512M-BIT, 4KB UNIFORM | Contains Lead | compliant | RFQ >> |
 |
W632GG6NB12I TR | Winbond Electronics | 2GB DDR3 SDRAM, X16, INDUSTRIAL | Contains Lead | compliant | RFQ >> |
|
W25R512JVEIN TR | Winbond Electronics | RPMC SPIFLASH, 3V, 512M-BIT, DRV | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABBCAH4-AIT:C TR | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAH4-AIT:C TR | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
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MT29F8G08ABACAH4-AIT:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABBCAH4-AIT:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
 |
W66AP6NBHAFJ TR | Winbond Electronics | 1GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAFJ TR | Winbond Electronics | 1GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAGJ | Winbond Electronics | 1GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
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W66AP6NBHAGJ | Winbond Electronics | 1GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
MT42L32M32D1HE-18 AAT:D TR | Micron Technology Inc. | IC MEMORY DRAM 1G 134FBGA | Contains Lead | compliant | RFQ >> |
 |
W29N04GZBIBA TR | Winbond Electronics | 4G-BIT SLC NAND FLASH, 1.8V, 1-B | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAHJ | Winbond Electronics | 1GB LPDDR4X, X16, 2133MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAGJ TR | Winbond Electronics | 1GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AP6NBHAGJ TR | Winbond Electronics | 1GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AP6NBHAHJ | Winbond Electronics | 1GB LPDDR4, X16, 2133MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AP6NBHAHJ TR | Winbond Electronics | 1GB LPDDR4, X16, 2133MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBHAHJ TR | Winbond Electronics | 1GB LPDDR4X, X16, 2133MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
GD9FS4G8F4DMGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
GD9FS4G8F4DLGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
E204GSEQG-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
GD5F2GQ5REY2GR | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBQAFJ | Winbond Electronics | 1GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
GD5F4GM8UEYJGR | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
W66BP6NBHAFJ | Winbond Electronics | 2GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66BQ6NBHAFJ | Winbond Electronics | 2GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AP6NBQAFJ TR | Winbond Electronics | 1GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBQAGJ | Winbond Electronics | 1GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AP6NBQAGJ | Winbond Electronics | 1GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBQAFJ TR | Winbond Electronics | 1GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
GD25F512MFB2RY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W66BQ6NBHAGJ | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
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W66BQ6NBHAFJ TR | Winbond Electronics | 2GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66BP6NBHAGJ | Winbond Electronics | 2GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66BP6NBHAFJ TR | Winbond Electronics | 2GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W634GU8RB11I | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 933MH | Contains Lead | compliant | RFQ >> |
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W66AQ6NBQAGJ TR | Winbond Electronics | 1GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AP6NBQAGJ TR | Winbond Electronics | 1GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AP6NBUAFJ | Winbond Electronics | 1GB LPDDR4, X16, 1600MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBUAFJ | Winbond Electronics | 1GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W634GU8RB09I | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 1066M | Contains Lead | compliant | RFQ >> |
|
W66BQ6NBHAGJ TR | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66BP6NBHAHJ | Winbond Electronics | 2GB LPDDR4, X16, 2133MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66BP6NBHAGJ TR | Winbond Electronics | 2GB LPDDR4, X16, 1866MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66BQ6NBHAHJ | Winbond Electronics | 2GB LPDDR4X, X16, 2133MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
MT42L16M32D1HE-18 AAT:E TR | Micron Technology Inc. | IC MEMORY DRAM 512M 134FBGA | Contains Lead | compliant | RFQ >> |
|
W66AQ6NBQAHJ | Winbond Electronics | 1GB LPDDR4X, X16, 2133MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
|
W66AP6NBQAHJ | Winbond Electronics | 1GB LPDDR4, X16, 2133MHZ, -40C~1 | Contains Lead | compliant | RFQ >> |
|
W66BQ6NBQAFJ | Winbond Electronics | 2GB LPDDR4X, X16, 1600MHZ, -40C~ | Contains Lead | compliant | RFQ >> |
