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Part No TPN3R704PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 40V 80A 8TSON
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2.4V @ 200µA
Vgs(th)(Max)@Id±20V
Vgs27 nC @ 10 V
FETFeature630mW (Ta), 86W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case8-TSON Advance (3.1x3.1)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)2500 pF @ 20 V
MinRdsOn)3.7mOhm @ 40A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)175°C

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