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Home > Products > Transistors > FETs, MOSFETs > ///TPN22006NH,LQ

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TPN22006NH,LQQuantity:4323

Part No TPN22006NH,LQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 9A 8TSON
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 100µA
Vgs(th)(Max)@Id±20V
Vgs12 nC @ 10 V
FETFeature700mW (Ta), 18W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperature-
DriveVoltage(MaxRdsOn6.5V, 10V
ProductStatusActive
Package/Case8-TSON Advance (3.3x3.3)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C9A (Ta)
Vgs(Max)710 pF @ 30 V
MinRdsOn)22mOhm @ 4.5A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C (TJ)

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