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Home > Products > Transistors > FETs, MOSFETs > ///TPH6R30ANL,L1Q

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Part No TPH6R30ANL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 100V 66A/45A 8SOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 500µA
Vgs(th)(Max)@Id±20V
Vgs55 nC @ 10 V
FETFeature2.5W (Ta), 54W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-SOP Advance (5x5)
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackage8-PowerVDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C66A (Ta), 45A (Tc)
Vgs(Max)4300 pF @ 50 V
MinRdsOn)6.3mOhm @ 22.5A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C

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