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Home > Products > Transistors > FETs, MOSFETs > ///TP44220HB

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TP44220HBQuantity:5353

Part No TP44220HB
Manufacturer Tagore Technology
Description GANFET 2N-CH 650V 30QFN
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id236mOhm @ 500mA, 6V
Vgs(th)(Max)@Id1.5nC @ 6V
Vgs2.5V @ 5.5mA
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)650V
OperatingTemperatureSurface Mount
ProductStatusActive
Package/Case30-QFN (8x10)
GateCharge(Qg)(Max)@Vgs55pF @ 400V
Grade-
MountingType30-PowerWFQFN
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackage-
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C10A (Tc)
PackageTray
Power-Max-55°C ~ 150°C (TJ)

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