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Home > Products > Transistors > FETs, MOSFETs > ///TK8R2E06PL,S1X

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Part No TK8R2E06PL,S1X
Manufacturer Toshiba Semiconductor and Storage
Description PB-F POWER MOSFET TRANSISTOR TO-
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 300µA
Vgs(th)(Max)@Id±20V
Vgs28 nC @ 10 V
FETFeature81W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C50A (Tc)
Vgs(Max)1990 pF @ 30 V
MinRdsOn)8.2mOhm @ 25A, 10V
PackageTube
PowerDissipation(Max)175°C

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