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Home > Products > Transistors > FETs, MOSFETs > ///TK2P90E,RQ

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TK2P90E,RQQuantity:4604

Part No TK2P90E,RQ
Manufacturer Toshiba Semiconductor and Storage
Description PB-F POWER MOSFET TRANSISTOR DPA
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 200µA
Vgs(th)(Max)@Id±30V
Vgs12 nC @ 10 V
FETFeature80W (Tc)
DraintoSourceVoltage(Vdss)900 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeDPAK
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C2A (Ta)
Vgs(Max)500 pF @ 25 V
MinRdsOn)5.9Ohm @ 1A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C

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