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Part No TK16J60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 600V 15.8A TO3P
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id3.7V @ 790µA
Vgs(th)(Max)@Id-
Vgs±30V
FETFeatureThrough Hole
DraintoSourceVoltage(Vdss)600 V
OperatingTemperatureTO-3P-3, SC-65-3
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType38 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds150°C (TJ)
SeriesDTMOSIV
Qualification
SupplierDevicePackage1350 pF @ 300 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C15.8A (Ta)
Vgs(Max)130W (Tc)
MinRdsOn)190mOhm @ 7.9A, 10V
PackageTube
PowerDissipation(Max)TO-3P(N)

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