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Part No TK14E65W5,S1X
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 650V 13.7A TO220
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4.5V @ 690µA
Vgs(th)(Max)@Id±30V
Vgs40 nC @ 10 V
FETFeature130W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@Vds-
SeriesDTMOSIV
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C13.7A (Ta)
Vgs(Max)1300 pF @ 300 V
MinRdsOn)300mOhm @ 6.9A, 10V
PackageTube
PowerDissipation(Max)150°C (TJ)

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