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Home > Products > Transistors > FETs, MOSFETs > ///TJ9A10M3,S4Q

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TJ9A10M3,S4QQuantity:4889

Part No TJ9A10M3,S4Q
Manufacturer Toshiba Semiconductor and Storage
Description TJ9A10M3,S4Q
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs47 nC @ 10 V
FETFeature19W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220SIS
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVI
Qualification
SupplierDevicePackageTO-220-3 Full Pack
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C9A (Ta)
Vgs(Max)2900 pF @ 10 V
MinRdsOn)170mOhm @ 4.5A, 10V
PackageTube
PowerDissipation(Max)150°C

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