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Buy TJ9A10M3,S4Q with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy TJ9A10M3,S4Q with confidence from acme-chip.com, 1 Year Warranty
TJ9A10M3,S4QQuantity:4889
Part No | TJ9A10M3,S4Q |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TJ9A10M3,S4Q |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 4V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 47 nC @ 10 V |
FETFeature | 19W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220SIS |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | U-MOSVI |
Qualification | |
SupplierDevicePackage | TO-220-3 Full Pack |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9A (Ta) |
Vgs(Max) | 2900 pF @ 10 V |
MinRdsOn) | 170mOhm @ 4.5A, 10V |
Package | Tube |
PowerDissipation(Max) | 150°C |
Introduce
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