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STI12N65M5Quantity:7972

Part No STI12N65M5
Manufacturer STMicroelectronics
Description MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Threshold Voltage4 V
MountThrough Hole
Fall Time15.6 ns
RoHSCompliant
Radiation HardeningNo
Drain to Source Voltage (Vdss)650 V
Drain to Source Resistance430 mΩ
Element ConfigurationSingle
Number of Pins3
Height9.35 mm
Input Capacitance900 pF
Width4.6 mm
Rds On Max430 mΩ
Max Power Dissipation70 W
Drain to Source Breakdown Voltage650 V
Gate to Source Voltage (Vgs)25 V
REACH SVHCNo SVHC
Turn-On Delay Time22.6 ns
Max Operating Temperature150 °C
Power Dissipation70 W
Continuous Drain Current (ID)8.5 A
Rise Time17.6 ns
Length10.4 mm
Turn-Off Delay Time15.6 ns
Case/PackageTO-262-3

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