Images are for reference only.
See Product Specifications for product details.
Buy SPI15N60C3 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy SPI15N60C3 with confidence from acme-chip.com, 1 Year Warranty
SPI15N60C3Quantity:12126
Specifications
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Current Rating | 15 A |
| Fall Time | 5 ns |
| Turn-On Delay Time | 10 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation | 156 W |
| Drain to Source Resistance | 280 mΩ |
| Continuous Drain Current (ID) | 15 A |
| Element Configuration | Single |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 50 ns |
| Number of Pins | 3 |
| Number of Elements | 1 |
| Input Capacitance | 1.66 nF |
| Voltage Rating (DC) | 650 V |
| Lead Free | Lead Free |
| Rds On Max | 280 mΩ |
| Case/Package | TO-262-3 |
| Max Power Dissipation | 156 W |
Introduce
We can supply SPI15N60C3 , send us a request quote to request SPI15N60C3 pirce and lead time. acme-chip.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SPI15N60C3.The price and lead time for SPI15N60C3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part SPI15N60C3.We look forward to working with you to establish long-term relations of cooperation
Related parts for SPI15N60C3
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SPI1004A-R40M-SN | ETRONIC | SMD | RFQ >> |
 |
SPI100N03S2-03 | Infineon Technologies | MOSFET N-CH 30V 100A I2PAK | RFQ >> |
|
SPI100N03S2L-03 | Infineon Technologies | MOSFET N-CH 30V 100A TO-262 | RFQ >> |
 |
SPI100N03S2L03 | Infineon Technologies | MOSFET N-CH 30V 100A TO262-3 | RFQ >> |
|
SPI100N08S2-07 | Infineon Technologies | MOSFET N-CH 75V 100A I2PAK | RFQ >> |
|
SPI10N10 | Infineon Technologies | MOSFET N-CH 100V 10.3A TO262-3 | RFQ >> |
|
SPI10N10L | Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | RFQ >> |
|
SPI11N60C3 | INFINEON | TO262 | RFQ >> |
|
SPI11N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 600V 11A TO-262 | RFQ >> |
|
SPI11N60C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 11A TO262-3 | RFQ >> |
|
SPI11N60CFD | Infineon | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN | RFQ >> |
|
SPI11N60CFDHKSA1 | Infineon Technologies | MOSFET N-CH 650V 11A TO262-3 | RFQ >> |
|
SPI11N60S5 | INFINEON | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | RFQ >> |
|
SPI11N60S5BKSA1 | Infineon Technologies | MOSFET N-CH 600V 11A TO262-3 | RFQ >> |
|
SPI11N65C3 | INFINEON | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | RFQ >> |
|
SPI11N65C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 11A TO262-3 | RFQ >> |
|
SPI1205B-R68MA | ETRONIC | SMD | RFQ >> |
|
SPI12N50C3 | INFINEON | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | RFQ >> |
|
SPI12N50C3XKSA1 | Infineon Technologies | MOSFET N-CH 560V 11.6A TO262-3 | RFQ >> |
|
SPI15N50C3 | INFINEON | TO-220 | RFQ >> |
|
SPI15N60C3 | Infineon | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3 | RFQ >> |
|
SPI15N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | RFQ >> |
|
SPI15N60CFD | INFINEON | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | RFQ >> |
|
SPI15N60CFDHKSA1 | Infineon Technologies | MOSFET N-CH 650V 13.4A TO262-3 | RFQ >> |
|
SPI15N65C3 | INFINEON | TO262-3 | RFQ >> |
|
SPI15N65C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | RFQ >> |
|
SPI16N50C3 | INFINEON | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | RFQ >> |
|
SPI16N50C3HKSA1 | Infineon Technologies | MOSFET N-CH 560V 16A TO262-3 | RFQ >> |
