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SPB80N10LGQuantity:19653

Part No SPB80N10LG
Manufacturer
Description Power Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage100 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Current Rating80 A
Fall Time20 ns
Turn-On Delay Time14 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature175 °C
Drain to Source Voltage (Vdss)100 V
Power Dissipation250 W
Drain to Source Resistance14 mΩ
Continuous Drain Current (ID)80 A
Element ConfigurationSingle
Rise Time60 ns
Turn-Off Delay Time82 ns
Input Capacitance4.54 nF
Voltage Rating (DC)100 V
Lead FreeLead Free
Rds On Max14 mΩ
Case/PackageTO-263-3
Max Power Dissipation250 W

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