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Part No SISC06DN-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 27.6A/40A PPAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2.1V @ 250µA
Vgs(th)(Max)@Id+20V, -16V
Vgs58 nC @ 10 V
FETFeature3.7W (Ta), 46.3W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET® Gen IV
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C27.6A (Ta), 40A (Tc)
Vgs(Max)2455 pF @ 15 V
MinRdsOn)2.7mOhm @ 15A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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