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Buy SIR316DP-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIR316DP-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
SIR316DP-T1-GE3Quantity:5524
Part No | SIR316DP-T1-GE3 |
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Manufacturer | Vishay |
Description | SiR316DP N-Channel 25 V (D-S) MOSFET |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
Min Operating Temperature | -55 °C |
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Gate to Source Voltage (Vgs) | 20 V |
Threshold Voltage | 1.2 V |
REACH SVHC | Unknown |
Mount | Surface Mount |
Fall Time | 8 ns |
Turn-On Delay Time | 24 ns |
RoHS | Compliant |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 25 V |
Power Dissipation | 3.9 W |
Drain to Source Resistance | 5.4 mΩ |
Continuous Drain Current (ID) | 30 A |
Element Configuration | Single |
Rise Time | 9 ns |
Turn-Off Delay Time | 14 ns |
Number of Pins | 8 |
Number of Elements | 1 |
Case/Package | SO |
Max Power Dissipation | 25 W |
Introduce
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