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SIR316DP-T1-GE3Quantity:5524

Part No SIR316DP-T1-GE3
Manufacturer Vishay
Description SiR316DP N-Channel 25 V (D-S) MOSFET
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Threshold Voltage1.2 V
REACH SVHCUnknown
MountSurface Mount
Fall Time8 ns
Turn-On Delay Time24 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)25 V
Power Dissipation3.9 W
Drain to Source Resistance5.4 mΩ
Continuous Drain Current (ID)30 A
Element ConfigurationSingle
Rise Time9 ns
Turn-Off Delay Time14 ns
Number of Pins8
Number of Elements1
Case/PackageSO
Max Power Dissipation25 W

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