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Home > Products > Transistors > FETs, MOSFETs > ///SCT10N120H

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SCT10N120HQuantity:4539

Part No SCT10N120H
Manufacturer STMicroelectronics
Description SICFET N-CH 1200V 12A H2PAK-2
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id3.5V @ 250µA
Vgs(th)(Max)@Id-
Vgs+25V, -10V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn20V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType22 nC @ 20 V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 200°C (TJ)
Series-
Qualification
SupplierDevicePackage290 pF @ 400 V
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C12A (Tc)
Vgs(Max)150W (Tc)
MinRdsOn)690mOhm @ 6A, 20V
PackageTape & Reel (TR)
PowerDissipation(Max)H2Pak-2

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