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Home > Products > Transistors > FETs, MOSFETs > ///RV4E031RPHZGTCR1

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RV4E031RPHZGTCR1Quantity:4047

Part No RV4E031RPHZGTCR1
Manufacturer Rohm Semiconductor
Description MOSFET P-CH 30V 3.1A DFN1616-6W
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id2.5V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs4.8 nC @ 5 V
FETFeature1.5W (Ta)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount, Wettable Flank
DriveVoltage(MaxRdsOn-
ProductStatusActive
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
MountingTypeDFN1616-6W
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackage6-PowerWFDFN
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3.1A (Ta)
Vgs(Max)460 pF @ 10 V
MinRdsOn)105mOhm @ 3.1A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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