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Home > Products > Transistors > FETs, MOSFETs > ///RQ3L070BGTB1

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Part No RQ3L070BGTB1
Manufacturer Rohm Semiconductor
Description NCH 60V 20A, HSMT8G, POWER MOSFE
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Datasheets
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Specifications

RdsOn(Max)@Id2.5V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs7.6 nC @ 10 V
FETFeature2W (Ta), 15W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case8-HSMT (3.2x3)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C7A (Ta), 20A (Tc)
Vgs(Max)460 pF @ 30 V
MinRdsOn)24.7mOhm @ 7A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C (TJ)

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