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Home > Products > Transistors > Bipolar (BJT) > ///RN4907FE,LF(CT

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RN4907FE,LF(CTQuantity:3547

Part No RN4907FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)50V
VceSaturation(Max)@Ib500nA
ProductStatusActive
Package/Case-
TransistorType1 NPN, 1 PNP - Pre-Biased (Dual)
Grade
MountingTypeES6
Current-CollectorCutoff(Max)100mW
Series-
DCCurrentGain(hFE)(Min)@Ic80 @ 10mA, 5V
Frequency-TransitionSurface Mount
Qualification
SupplierDevicePackage-
Vce300mV @ 250µA, 5mA
Current-Collector(Ic)(Max)100mA
Ic250MHz, 200MHz
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Resistor-Base(R1)10kOhms
Power-MaxSOT-563, SOT-666
Resistor-EmitterBase(R2)47kOhms

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