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Home > Products > Transistors > Bipolar (BJT) > ///RN2102MFV,L3XHF(CT

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RN2102MFV,L3XHF(CTQuantity:3702

Part No RN2102MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 50V 0.1A VESM
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)50 V
VceSaturation(Max)@Ib500nA
ProductStatusActive
Package/CaseVESM
TransistorTypePNP - Pre-Biased
Grade
MountingTypeSOT-723
Current-CollectorCutoff(Max)150 mW
Series-
DCCurrentGain(hFE)(Min)@Ic50 @ 10mA, 5V
Frequency-TransitionAEC-Q101
Qualification
SupplierDevicePackageAutomotive
Vce300mV @ 500µA, 5mA
Current-Collector(Ic)(Max)100 mA
Ic250 MHz
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Resistor-Base(R1)10 kOhms
Power-MaxSurface Mount
Resistor-EmitterBase(R2)10 kOhms

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