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Home > Products > Transistors > Bipolar (BJT) > ///RN1104MFV,L3F

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RN1104MFV,L3FQuantity:7448

Part No RN1104MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 0.1A VESM
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)50 V
VceSaturation(Max)@Ib500nA
ProductStatusActive
Package/Case-
TransistorTypeNPN - Pre-Biased
Grade
MountingTypeVESM
Current-CollectorCutoff(Max)Surface Mount
Series-
DCCurrentGain(hFE)(Min)@Ic80 @ 10mA, 5V
Frequency-Transition-
Qualification
SupplierDevicePackage-
Vce300mV @ 500µA, 5mA
Current-Collector(Ic)(Max)100 mA
Ic150 mW
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Resistor-Base(R1)47 kOhms
Power-MaxSOT-723
Resistor-EmitterBase(R2)47 kOhms

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