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Home > Products > Transistors > FETs, MOSFETs > ///R6511ENXC7G

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R6511ENXC7GQuantity:4312

Part No R6511ENXC7G
Manufacturer Rohm Semiconductor
Description 650V 11A TO-220FM, LOW-NOISE POW
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4V @ 320µA
Vgs(th)(Max)@Id±20V
Vgs32 nC @ 10 V
FETFeature53W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220FM
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-220-3 Full Pack
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C11A (Ta)
Vgs(Max)670 pF @ 25 V
MinRdsOn)400mOhm @ 3.8A, 10V
PackageTube
PowerDissipation(Max)150°C (TJ)

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