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Home > Products > Transistors > FETs, MOSFETs > ///R6502END3TL1

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Part No R6502END3TL1
Manufacturer Rohm Semiconductor
Description 650V 1.7A TO-252, LOW-NOISE POWE
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature150°C (TJ)
FET Feature-
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds65 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Grade-
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs4Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4V @ 40µA
Supplier Device PackageTO-252
Drain to Source Voltage (Vdss)650 V
Series-
Power Dissipation (Max)26W (Tc)
Qualification-
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)10V

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