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Home > Products > Transistors > FETs, MOSFETs > ///NTHL022N120M3S

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NTHL022N120M3SQuantity:2880

Part No NTHL022N120M3S
Manufacturer onsemi
Description SILICON CARBIDE (SIC) MOSFET ELI
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.4V @ 20mA
Vgs(th)(Max)@Id3130 pF @ 800 V
Vgs139 nC @ 18 V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperature-
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/CaseTO-247-3
GateCharge(Qg)(Max)@Vgs+22V, -10V
Grade
MountingTypeThrough Hole
InputCapacitance(Ciss)(Max)@Vds352W (Tc)
Series-
Qualification
SupplierDevicePackageTO-247-3
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C68A (Tc)
Vgs(Max)-
MinRdsOn)30mOhm @ 40A, 18V
PackageTube
PowerDissipation(Max)-

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